TK39A60W,S4VX Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 608 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4100pF @ 300V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 38.8A amps.It is [200 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 80 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

TK39A60W,S4VX Features

the avalanche energy rating (Eas) is 608 mJ
a continuous drain current (ID) of 38.8A
the turn-off delay time is 200 ns
a 600V drain to source voltage (Vdss)

TK39A60W,S4VX Applications

There are a lot of Toshiba Semiconductor and Storage
TK39A60W,S4VX applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies