NDD60N900U1-1G

new-10%

Manufacturer part number:NDD60N900U1-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 5.9A IPAK-4

Case Package:SOT-23

Datasheet:NDD60N900U1-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	5 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Configuration	Single
Power Dissipation-Max	74W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 50V
Current - Continuous Drain (Id) @ 25°C	5.7A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Continuous Drain Current (ID)	5.7A
Drain Current-Max (Abs) (ID)	5.9A
RoHS Status	RoHS Compliant
Lead Free	Lead Free