PSMN011-60MLX datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PSMN011-60MLX Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-1210, 8-LFPAK33
Surface Mount
YES
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Pin Count
8
JESD-30 Code
R-PSSO-G4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
91W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
91W
Case Connection
DRAIN
Turn On Delay Time
13.3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11.3m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2.45V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2191pF @ 30V
Current - Continuous Drain (Id) @ 25°C
61A Tc
Gate Charge (Qg) (Max) @ Vgs
37.2nC @ 10V
Rise Time
20.2ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
15.5 ns
Turn-Off Delay Time
27.7 ns
Continuous Drain Current (ID)
61A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Pulsed Drain Current-Max (IDM)
242A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PSMN011-60MLX Product Details
PSMN011-60MLX Description
The PSMN011-60MLX is a Logic level enhancement mode N-channel MOSFET in the LFPAK33 package. It is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
PSMN011-60MLX Features
High efficiency due to low switching and conduction losses
Suitable for standard-level gate drive sources
LFPAK33 package is footprint compatible with other 3.3mm types