Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	187W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8474pF @ 50V
Current - Continuous Drain (Id) @ 25°C	140A Tc
Gate Charge (Qg) (Max) @ Vgs	111.7nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	140A
Drain-source On Resistance-Max	0.005Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	542 mJ
RoHS Status	ROHS3 Compliant

DMTH10H005SCT

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