FDMC610P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDMC610P Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
32.13mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.4W Ta 48W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
24 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.9m Ω @ 22A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1250pF @ 6V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
99nC @ 4.5V
Rise Time
37ns
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
87 ns
Turn-Off Delay Time
193 ns
Continuous Drain Current (ID)
80A
JEDEC-95 Code
MO-240BA
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
22A
Drain-source On Resistance-Max
0.0039Ohm
Drain to Source Breakdown Voltage
-12V
Pulsed Drain Current-Max (IDM)
200A
Height
1mm
Length
3.4mm
Width
3.4mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.669920
$0.66992
10
$0.632000
$6.32
100
$0.596226
$59.6226
500
$0.562478
$281.239
1000
$0.530639
$530.639
FDMC610P Product Details
FDMC610P Description
FDMC610P is a -12V P-Channel PowerTrench? MOSFET manufactured by onsemi. This P-Channel MOSFET FDMC610P has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMC610P has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMC610P Features
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge boost efficiency
Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
RoHS Compliant
FDMC610P Applications
High side switching for high-end computing
High power density DC-DC synchronous buck converter