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FDMC610P

  • FDMC610P
  • FDMC610P

FDMC610P

FDMC610P

ON Semiconductor

FDMC610P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMC610P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 32.13mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 22A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 6V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 99nC @ 4.5V
Rise Time 37ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 87 ns
Turn-Off Delay Time 193 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0039Ohm
Drain to Source Breakdown Voltage -12V
Pulsed Drain Current-Max (IDM) 200A
Height 1mm
Length 3.4mm
Width 3.4mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.669920 $0.66992
10 $0.632000 $6.32
100 $0.596226 $59.6226
500 $0.562478 $281.239
1000 $0.530639 $530.639
FDMC610P Product Details

FDMC610P Description


FDMC610P is a -12V P-Channel PowerTrench? MOSFET manufactured by onsemi. This P-Channel MOSFET FDMC610P has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMC610P has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.



FDMC610P Features


  • Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A

  • Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A

  • State-of-the-art switching performance

  • Lower output capacitance, gate resistance, and gate charge boost efficiency

  • Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction

  • RoHS Compliant



FDMC610P Applications


  • High side switching for high-end computing

  • High power density DC-DC synchronous buck converter


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