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PSMN013-80YS,115

PSMN013-80YS,115

PSMN013-80YS,115

Nexperia USA Inc.

MOSFET (Metal Oxide) N-Channel Digi-Reel® 12.9m Ω @ 15A, 10V ±20V 2420pF @ 40V 37nC @ 10V SC-100, SOT-669

SOT-23

PSMN013-80YS,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Digi-Reel®
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 106W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 106W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 40V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 60A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.00129Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 233A
Avalanche Energy Rating (Eas) 70 mJ
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.393676 $3.393676
10 $3.201582 $32.01582
100 $3.020360 $302.036
500 $2.849396 $1424.698
1000 $2.688110 $2688.11
PSMN013-80YS,115 Product Details

PSMN013-80YS,115 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 70 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2420pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=80V. And this device has 80V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 37 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 233A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 80V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.

PSMN013-80YS,115 Features


the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 233A.


PSMN013-80YS,115 Applications


There are a lot of Nexperia USA Inc.
PSMN013-80YS,115 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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