PSMN102-200Y,115

new-10%

Manufacturer part number:PSMN102-200Y,115

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 200V 21.5A LFPAK

Case Package:SOT-23

Datasheet:PSMN102-200Y,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	113W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	113W
Case Connection	DRAIN
Turn On Delay Time	14.2 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	102m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1568pF @ 30V
Current - Continuous Drain (Id) @ 25°C	21.5A Tc
Gate Charge (Qg) (Max) @ Vgs	30.7nC @ 10V
Rise Time	29.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	21.5A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Drain-source On Resistance-Max	0.102Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	65A
Avalanche Energy Rating (Eas)	202 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free