PSMN165-200K,518

new-10%

Manufacturer part number:PSMN165-200K,518

Manufacturer:Nexperia USA Inc.

Description:MOSFET N-CH 200V 2.9A SOT96-1

Case Package:SOT-23

Datasheet:PSMN165-200K,518 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	NICKEL PALLADIUM GOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.5W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1330pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.9A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	2.9A
JEDEC-95 Code	MS-012AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Drain-source On Resistance-Max	0.165Ohm
Drain to Source Breakdown Voltage	200V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free