NTMS4N01R2G

new-10%

NTMS4N01R2G

Manufacturer part number:NTMS4N01R2G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 20V 3.3A 8-SOIC

Case Package:SOT-23

Datasheet:NTMS4N01R2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	OBSOLETE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
Current Rating	4.2A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	770mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.3A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	4.2A
Threshold Voltage	950mV
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	3.3A
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Nominal Vgs	950 mV
Feedback Cap-Max (Crss)	100 pF
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free