FDMS86200

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FDMS86200

Manufacturer part number:FDMS86200

Manufacturer:ON Semiconductor

Description:FDMS86200 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS86200 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	68.1mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	21MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta 104W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2715pF @ 75V
Current - Continuous Drain (Id) @ 25°C	9.6A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	7.9ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.8 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	9.6A
Threshold Voltage	2.5V
JEDEC-95 Code	MO-240AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	52A
Drain to Source Breakdown Voltage	150V
Avalanche Energy Rating (Eas)	220 mJ
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	5mm
Width	6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free