PSMN4R0-30YLDX

new-10%

Manufacturer part number:PSMN4R0-30YLDX

Manufacturer:Nexperia USA Inc.

Description:MOSFET MOSFET N-CH 30V LFPAK

Case Package:SOT-23

Datasheet:PSMN4R0-30YLDX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchMOS™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	64W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1272pF @ 15V
Current - Continuous Drain (Id) @ 25°C	95A Tc
Gate Charge (Qg) (Max) @ Vgs	19.4nC @ 10V
Rise Time	21.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11.7 ns
Turn-Off Delay Time	14.9 ns
Continuous Drain Current (ID)	95A
JEDEC-95 Code	MO-235
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	30V
Drain-source On Resistance-Max	0.0055Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	378A
Avalanche Energy Rating (Eas)	63 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant