BSS123LT1G Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 20pF @ 25V.This device's continuous drain current (ID) is 170mA, which represents the maximum continuous current it can conduct.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 800mV threshold voltage.In addition to reducing power consumption, this device uses drive voltage (10V).

BSS123LT1G Features

a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
a threshold voltage of 800mV

BSS123LT1G Applications

There are a lot of ON Semiconductor BSS123LT1G applications of single MOSFETs transistors.

• LCD/LED/ PDP TV Lighting
• Battery Protection Circuit
• DC-to-DC converters
• Motor Drives and Uninterruptible Power Supples
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• AC-DC Power Supply
• Lighting
• Consumer Appliances
• Telecom 1 Sever Power Supplies
• Motor control