PSMN4R8-100BSEJ

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PSMN4R8-100BSEJ

Manufacturer part number:PSMN4R8-100BSEJ

Manufacturer:Nexperia USA Inc.

Description:PSMN4R8-100BSEJ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PSMN4R8-100BSEJ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Material	Brass, Bronze
Weight	3.949996g
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	Wire Wrap
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Plating	Gold, Lead, Tin
Power Dissipation-Max	405W Tc
Element Configuration	Single
Wire Gauge (Max)	24 AWG
Wire Gauge (Min)	20 AWG
Operating Mode	ENHANCEMENT MODE
Power Dissipation	405W
Wire/Cable Gauge	18 AWG
Case Connection	DRAIN
Turn On Delay Time	41 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	14400pF @ 50V
Current - Continuous Drain (Id) @ 25°C	120A Tj
Gate Charge (Qg) (Max) @ Vgs	278nC @ 10V
Rise Time	65ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	69 ns
Turn-Off Delay Time	127 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain Current-Max (Abs) (ID)	707A
Drain-source On Resistance-Max	0.0048Ohm
Pulsed Drain Current-Max (IDM)	707A
Avalanche Energy Rating (Eas)	542 mJ
Turn Off Time-Max (toff)	294ns
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free