BLF7G10LS-250

new-10%

Manufacturer part number:BLF7G10LS-250

Manufacturer:NXP Semiconductors

Description:BLF7G10LS-250 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available on our website

Case Package:SOT-23

Datasheet:BLF7G10LS-250 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	2
Transistor Element Material	SILICON
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	65
Maximum Gate Source Voltage (V)	13
Maximum VSWR	10
Maximum Continuous Drain Current (A)	56
Maximum Drain Source Resistance (mOhm)	57(Typ)@6.05V
Typical Forward Transconductance (S)	22
Output Power (W)	60(Typ)
Typical Power Gain (dB)	19.5
Maximum Frequency (MHz)	960
Minimum Frequency (MHz)	869
Typical Drain Efficiency (%)	30.5
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	200
Supplier Package	SOT-502B
Military	No
Mounting	Surface Mount
Package Height	4.72(Max)
Package Length	20.7(Max)
Package Width	9.91(Max)
PCB changed	3
Package Shape	RECTANGULAR
Manufacturer	NXP Semiconductors
Part Status	Active
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-CDFP-F2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
DS Breakdown Voltage-Min	65 V
Channel Type	N
FET Technology	METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
Mode of Operation	2-Carrier W-CDMA
RoHS Status	RoHS Compliant