AFT05MS031NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
AFT05MS031NR1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270AA
Surface Mount
YES
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
40V
HTS Code
8541.29.00.40
Subcategory
FET General Purpose Power
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
520MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
AFT05MS031
Operating Temperature (Max)
150°C
Configuration
Single
Current - Test
10mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
17.7dB
Power - Output
31W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
294W
Voltage - Test
13.6V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$8.17800
$4089
1,000
$7.50120
$7.5012
AFT05MS031NR1 Product Details
AFT05MS031NR1 Description
AFT05MS031NR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT05MS031NR1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT05MS031NR1 has the common source configuration.