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AFT09MS031GNR1

  • AFT09MS031GNR1
  • AFT09MS031GNR1

AFT09MS031GNR1

AFT09MS031GNR1

NXP USA Inc.

AFT09MS031GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

AFT09MS031GNR1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case TO-270BA
Surface Mount YES
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 40V
HTS Code 8541.29.00.40
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 870MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number AFT09MS031
Operating Temperature (Max) 150°C
Configuration Single
Current - Test 500mA
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 17.2dB
Power - Output 31W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 317W
Voltage - Test 13.6V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $10.69956 $5349.78
1,000 $9.81407 $9.81407
AFT09MS031GNR1 Product Details

AFT09MS031GNR1 Description

 

AFT09MS031GNR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT09MS031GNR1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT09MS031GNR1 has the common source configuration.

 

 

AFT09MS031GNR1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AFT09MS031GNR1 Applications

 

ISM applications

DC large signal applications

 


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