BC856T,115

join

new-10%

Manufacturer part number:BC856T,115

Manufacturer:NXP USA Inc.

Description:BC856T,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:BC856T,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SC-75
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	Automotive, AEC-Q101
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Base Part Number	BC856
Power - Max	150mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	125 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	65V
Current - Collector (Ic) (Max)	100mA
Frequency - Transition	100MHz
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.02000	$0.02
500	$0.0198	$9.9
1000	$0.0196	$19.6
1500	$0.0194	$29.1
2000	$0.0192	$38.4
2500	$0.019	$47.5

BC856T,115 Overview

In this device, the DC current gain is 125 @ 2mA 5V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The product comes in the supplier device package of SC-75.Single BJT transistor shows a 65V maximal voltage - Collector EmSingle BJT transistorter Breakdown.