2SD1816T-TL-E Overview

In this device, the DC current gain is 200 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 200mA, 2A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, the part has a transition frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

2SD1816T-TL-E Features

the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

2SD1816T-TL-E Applications

There are a lot of ON Semiconductor 2SD1816T-TL-E applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface