BS108,126

new-10%

Manufacturer part number:BS108,126

Manufacturer:NXP USA Inc.

Description:MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5 Ω @ 100mA, 2.8V ±20V 120pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Case Package:SOT-23

Datasheet:BS108,126 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Box (TB)
Published	2001
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	O-PBCY-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 100mA, 2.8V
Vgs(th) (Max) @ Id	1.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	2.8V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	0.3A
Drain-source On Resistance-Max	5Ohm
DS Breakdown Voltage-Min	200V
Feedback Cap-Max (Crss)	15 pF
RoHS Status	ROHS3 Compliant