NTD4959NH-1G

new-10%

Manufacturer part number:NTD4959NH-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 9A IPAK

Case Package:SOT-23

Datasheet:NTD4959NH-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.3W Ta 52W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2155pF @ 12V
Current - Continuous Drain (Id) @ 25°C	9A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs	44nC @ 11.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Continuous Drain Current (ID)	58A
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.0125Ohm
Avalanche Energy Rating (Eas)	112.5 mJ
RoHS Status	RoHS Compliant