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BUK7514-55A,127

BUK7514-55A,127

BUK7514-55A,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 14m Ω @ 25A, 10V ±20V 2464pF @ 25V 55V TO-220-3

SOT-23

BUK7514-55A,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTION
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 166W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2464pF @ 25V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 73A
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 266A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 125 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.53000 $0.53
500 $0.5247 $262.35
1000 $0.5194 $519.4
1500 $0.5141 $771.15
2000 $0.5088 $1017.6
2500 $0.5035 $1258.75
BUK7514-55A,127 Product Details

BUK7514-55A,127 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 125 mJ.A device's maximal input capacitance is 2464pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 73A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 266A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 55V.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

BUK7514-55A,127 Features


the avalanche energy rating (Eas) is 125 mJ
based on its rated peak drain current 266A.
a 55V drain to source voltage (Vdss)


BUK7514-55A,127 Applications


There are a lot of NXP USA Inc.
BUK7514-55A,127 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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