IRL610A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
IRL610A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1999
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Current Rating
3.3A
Power Dissipation-Max
33W Tc
Element Configuration
Single
Power Dissipation
33W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
240pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.3A Tc
Gate Charge (Qg) (Max) @ Vgs
9nC @ 5V
Rise Time
9ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
3.3A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Input Capacitance
240pF
Drain to Source Resistance
1.5Ohm
Rds On Max
1.5 Ω
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRL610A Product Details
IRL610A Description
The IRL610A is a 200V N-channel Power MOSFET, a third-generation power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 33W. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRL610A is in the TO-220-3 package with 33W power dissipation.