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IRF640

IRF640

IRF640

STMicroelectronics

IRF640 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

IRF640 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MESH OVERLAY™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 18A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF6
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 72A
Avalanche Energy Rating (Eas) 280 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.69300 $1.386
IRF640 Product Details

Description


The IRF640 is a TO-220/TO-220FP Mesh overlayTMPower MOSFET with an N-channel 200V - 0.15? - 18A capability. The MESH OVERLAYTM process was used to build this power MOSFET, which is based on a consolidated strip layout. In comparison to standard parts from a variety of suppliers, our technology matches and enhances performance.



Features


■ Extremely high dv/dt capability

■ Very low intrinsic capacitances

low gate charge and low on-resistance low gate charge and low on-resistance

■ Gate charge minimized

■ Low gate charge

■ Low on-resistance



Applications


■ Switching application

■ Small motor control

■ Switch Mode Power Supplies (SMPS)

■ Power-Over-Ethernet (PoE)

■ Solar inverters

■ Automotive applications


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