BUK9516-75B,127

new-10%

Manufacturer part number:BUK9516-75B,127

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 75V 67A TO220AB

Case Package:SOT-23

Datasheet:BUK9516-75B,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	157W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4034pF @ 25V
Current - Continuous Drain (Id) @ 25°C	67A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 5V
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±15V
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	67A
Drain-source On Resistance-Max	0.018Ohm
Pulsed Drain Current-Max (IDM)	270A
DS Breakdown Voltage-Min	75V
Avalanche Energy Rating (Eas)	140 mJ
RoHS Status	ROHS3 Compliant