IXTY5N50P

new-10%

Manufacturer part number:IXTY5N50P

Manufacturer:IXYS

Description:MOSFET N-CH 500V 4.8A TO-252AA

Case Package:SOT-23

Datasheet:IXTY5N50P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Pure Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	89W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	89W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.4 Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id	5.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.8A Tc
Gate Charge (Qg) (Max) @ Vgs	12.6nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	4.8A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	10A
Avalanche Energy Rating (Eas)	250 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free