Description

The MRF101AN is an RF Power LDMOS Transistor, High Ruggedness N-Channel, Enhancement-Mode Lateral MOSFETs. These gadgets are made for HF and VHF communications, as well as industrial, scientific, and medical (ISM), broadcast, and aerospace applications. The equipment is very durable and performs well up to 250 MHz.

Features

• Integrated ESD protection with greater negative gate-source

• Voltage range for improved Class C operation

• Included in NXP product longevity program with assured

• Supply for a minimum of 15 years after launch

• Mirror pinout versions (A and B) to simplify use in a push-pull,

• Two-up configuration

• Characterized from 30 to 50 V

• Suitable for linear application

Applications

• Radio and VHF TV broadcast

• HF and VHF communications

• Switch mode power supplies

• Industrial, scientific, medical (ISM)

– Laser generation

– Plasma etching

– Particle accelerators

– MRI and other medical applications

– Industrial heating, welding and drying systems