MRFE6S9125NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
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MRFE6S9125NBR1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-272BB
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
66V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
880MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6S9125
JESD-30 Code
R-PDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
950mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
20.2dB
DS Breakdown Voltage-Min
66V
Power - Output
27W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$26.297680
$26.29768
10
$24.809132
$248.09132
100
$23.404842
$2340.4842
500
$22.080039
$11040.0195
1000
$20.830226
$20830.226
MRFE6S9125NBR1 Product Details
MRFE6S9125NBR1 Description
Designed with frequencies up to 1000 MHz for broadband commercial and industrial applications. These devices are perfect for large-signal, common-source amplifier applications in 28-volt base station equipment due to their high gain and broadband performance.
MRFE6S9125NBR1 Features
? Possess Series Equivalent Large-Signal Impedance Parameters.
? Internally Matching for User-Friendliness
? Protection from Integrated ESD
? Plastic Package with 225°C Capability
? RoHS conformant
? on reel-to-reel tape. 500 Units per 44 mm, 13 inch Reel, R1 Suffix.