MRFE6VP5600HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
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MRFE6VP5600HR5 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI-1230-4H
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
4
ECCN Code
EAR99
Voltage - Rated
130V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
230MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VP5600
JESD-30 Code
R-CDFM-F4
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
2
Configuration
COMMON SOURCE, 2 ELEMENTS
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
25dB
DS Breakdown Voltage-Min
130V
Power - Output
600W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
1670W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$141.434080
$141.43408
10
$133.428377
$1334.28377
100
$125.875828
$12587.5828
500
$118.750781
$59375.3905
1000
$112.029039
$112029.039
MRFE6VP5600HR5 Product Details
MRFE6VP5600HR5 Description
MRFE6VP5600HR5 is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes MRFE6VP5600HR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRFE6VP5600HR5 has the common source configuration.
MRFE6VP5600HR5 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures