PBSS2515E,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website
SOT-23
PBSS2515E,115 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PBSS2515
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
420MHz
Frequency - Transition
420MHz
Power Dissipation-Max (Abs)
0.25W
RoHS Status
ROHS3 Compliant
PBSS2515E,115 Product Details
PBSS2515E,115 Overview
DC current gain in this device equals 150 @ 100mA 2V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 250mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 420MHz.The device has a 15V maximal voltage - Collector Emitter Breakdown.
PBSS2515E,115 Features
the DC current gain for this device is 150 @ 100mA 2V the vce saturation(Max) is 250mV @ 50mA, 500mA a transition frequency of 420MHz
PBSS2515E,115 Applications
There are a lot of NXP USA Inc. PBSS2515E,115 applications of single BJT transistors.