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PBSS4140V,115

PBSS4140V,115

PBSS4140V,115

NXP USA Inc.

PBSS4140V,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available on our website

SOT-23

PBSS4140V,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PBSS4140
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 500mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 440mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1A
Transition Frequency 150MHz
Frequency - Transition 150MHz
Power Dissipation-Max (Abs) 0.25W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.05000 $0.05
500 $0.0495 $24.75
1000 $0.049 $49
1500 $0.0485 $72.75
2000 $0.048 $96
2500 $0.0475 $118.75
PBSS4140V,115 Product Details

PBSS4140V,115 Overview


DC current gain in this device equals 300 @ 500mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 440mV @ 200mA, 2A.There is a transition frequency of 150MHz in the part.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PBSS4140V,115 Features


the DC current gain for this device is 300 @ 500mA 5V
the vce saturation(Max) is 440mV @ 200mA, 2A
a transition frequency of 150MHz

PBSS4140V,115 Applications


There are a lot of NXP USA Inc. PBSS4140V,115 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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