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PHB110NQ08LT,118

PHB110NQ08LT,118

PHB110NQ08LT,118

NXP USA Inc.

MOSFET N-CH 75V 75A D2PAK

SOT-23

PHB110NQ08LT,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series TrenchMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 230W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6631pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 127.3nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant

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