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PHK4NQ10T,518

PHK4NQ10T,518

PHK4NQ10T,518

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 70m Ω @ 4A, 10V ±20V 880pF @ 25V 22nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)

SOT-23

PHK4NQ10T,518 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 100V
RoHS Status ROHS3 Compliant
PHK4NQ10T,518 Product Details

PHK4NQ10T,518 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 880pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 4A.Pulsed drain current is maximum rated peak drain current 16A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

PHK4NQ10T,518 Features


based on its rated peak drain current 16A.
a 100V drain to source voltage (Vdss)


PHK4NQ10T,518 Applications


There are a lot of NXP USA Inc.
PHK4NQ10T,518 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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