STL25N15F4

new-10%

Manufacturer part number:STL25N15F4

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 150V 25A 8-Pin Power Flat T/R

Case Package:SOT-23

Datasheet:STL25N15F4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	DeepGATE™, STripFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	AVALANCE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Base Part Number	STL25
Pin Count	8
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	80W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	13.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	63m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2710pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	5.1ns
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	11.4 ns
Turn-Off Delay Time	39.7 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.063Ohm
Pulsed Drain Current-Max (IDM)	24A
DS Breakdown Voltage-Min	150V
Avalanche Energy Rating (Eas)	125 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free