IRLU8259PBF

new-10%

Manufacturer part number:IRLU8259PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 25V 57A IPAK

Case Package:SOT-23

Datasheet:IRLU8259PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Supplier Device Package	I-PAK
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	48W Tc
Power Dissipation	48W
Turn On Delay Time	8.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 13V
Current - Continuous Drain (Id) @ 25°C	57A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	38ns
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8.9 ns
Turn-Off Delay Time	9.1 ns
Continuous Drain Current (ID)	57A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Input Capacitance	900pF
Recovery Time	26 ns
Drain to Source Resistance	12.9mOhm
Rds On Max	8.7 mΩ
Nominal Vgs	1.9 V
Height	6.22mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant