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PHX8NQ11T,127

PHX8NQ11T,127

PHX8NQ11T,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 180m Ω @ 6A, 10V ±20V 360pF @ 25V 14.7nC @ 10V 110V TO-220-3 Full Pack, Isolated Tab

SOT-23

PHX8NQ11T,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series TrenchMOS™
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 27.7W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Tc
Gate Charge (Qg) (Max) @ Vgs 14.7nC @ 10V
Drain to Source Voltage (Vdss) 110V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 7.5A
Drain-source On Resistance-Max 0.18Ohm
Pulsed Drain Current-Max (IDM) 30.2A
DS Breakdown Voltage-Min 110V
Avalanche Energy Rating (Eas) 35 mJ
RoHS Status ROHS3 Compliant
PHX8NQ11T,127 Product Details

PHX8NQ11T,127 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 35 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 360pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 7.5A.Peak drain current is 30.2A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 110V.For this transistor to work, a voltage 110V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

PHX8NQ11T,127 Features


the avalanche energy rating (Eas) is 35 mJ
based on its rated peak drain current 30.2A.
a 110V drain to source voltage (Vdss)


PHX8NQ11T,127 Applications


There are a lot of NXP USA Inc.
PHX8NQ11T,127 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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