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PMFPB6532UP,115

PMFPB6532UP,115

PMFPB6532UP,115

NXP USA Inc.

MOSFET FET-KY P-Channel 20V

SOT-23

PMFPB6532UP,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Surface Mount YES
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Pin Count 6
Configuration Single
Power Dissipation-Max 520mW Ta 8.3W Tc
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 70m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 3.5A
FET Feature Schottky Diode (Isolated)
RoHS Status ROHS3 Compliant

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