PMN23UN,165

new-10%

Manufacturer part number:PMN23UN,165

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 20V 6.3A 6TSOP

Case Package:SOT-23

Datasheet:PMN23UN,165 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	FAST SWITCHING, LOW THRESHOLD
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.75W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6.3A Tc
Gate Charge (Qg) (Max) @ Vgs	10.6nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Drain Current-Max (Abs) (ID)	6.3A
Drain-source On Resistance-Max	0.0344Ohm
Pulsed Drain Current-Max (IDM)	25.2A
DS Breakdown Voltage-Min	20V
RoHS Status	ROHS3 Compliant