PMPB12UN,115

new-10%

Manufacturer part number:PMPB12UN,115

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 20V 7.9A 6DFN

Case Package:SOT-23

Datasheet:PMPB12UN,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Pin Count	6
Reference Standard	IEC-60134
JESD-30 Code	S-PDSO-N6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.7W Ta 12.5W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 7.9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	886pF @ 10V
Current - Continuous Drain (Id) @ 25°C	7.9A Ta
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Drain Current-Max (Abs) (ID)	7.9A
Drain-source On Resistance-Max	0.018Ohm
Pulsed Drain Current-Max (IDM)	31A
DS Breakdown Voltage-Min	20V
RoHS Status	ROHS3 Compliant