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2N3013

2N3013

2N3013

ON Semiconductor

2N3013 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N3013 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N3013
Power - Max 360mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA 400mV
Current - Collector Cutoff (Max) 300nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 350MHz
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $30.68000 $30.68
500 $30.3732 $15186.6
1000 $30.0664 $30066.4
1500 $29.7596 $44639.4
2000 $29.4528 $58905.6
2500 $29.146 $72865
2N3013 Product Details

2N3013 Description


The ON Semiconductor 2N3013 is an NPN bipolar transistor for high-speed and high-frequency amplifier applications for saturated switching at high speed.



2N3013 Features


  • Directly replaces legacy Fairchild, Microsemi, Motorola & National Semiconductor transistors

  • Suited for use in Industrial, Medical, Military & Aerospace industries

  • Small footprint for high integration & close placement to signal source

  • Committed long-term support with no die mask changes



2N3013 Applications


  • General Use


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