2N3055HG Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 4A 4V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 2.5MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.

2N3055HG Features

the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz

2N3055HG Applications

There are a lot of ON Semiconductor 2N3055HG applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter