2N3442G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2N3442G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
140V
Max Power Dissipation
117W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
10A
Frequency
80MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N3442
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
117W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
80MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3A 4V
Current - Collector Cutoff (Max)
200mA
Vce Saturation (Max) @ Ib, Ic
5V @ 2A, 10A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
0.08MHz
Collector Emitter Saturation Voltage
5V
Frequency - Transition
80kHz
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
7V
hFE Min
20
Height
8.51mm
Length
39.37mm
Width
26.67mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.46000
$6.46
10
$5.79700
$57.97
100
$4.75000
$475
500
$4.04358
$2021.79
2N3442G Product Details
2N3442G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3A 4V.The collector emitter saturation voltage is 5V, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 2A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.In the part, the transition frequency is 0.08MHz.A maximum collector current of 10A volts is possible.
2N3442G Features
the DC current gain for this device is 20 @ 3A 4V a collector emitter saturation voltage of 5V the vce saturation(Max) is 5V @ 2A, 10A the emitter base voltage is kept at 7V the current rating of this device is 10A a transition frequency of 0.08MHz
2N3442G Applications
There are a lot of ON Semiconductor 2N3442G applications of single BJT transistors.