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2N3442G

2N3442G

2N3442G

ON Semiconductor

2N3442G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N3442G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface MountNO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 140V
Max Power Dissipation117W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating10A
Frequency 80MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N3442
Pin Count2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation117W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product80MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A 4V
Current - Collector Cutoff (Max) 200mA
Vce Saturation (Max) @ Ib, Ic 5V @ 2A, 10A
Collector Emitter Breakdown Voltage140V
Transition Frequency 0.08MHz
Collector Emitter Saturation Voltage5V
Frequency - Transition 80kHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2207 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.46000$6.46
10$5.79700$57.97
100$4.75000$475
500$4.04358$2021.79

2N3442G Product Details

2N3442G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 3A 4V.The collector emitter saturation voltage is 5V, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 2A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.In the part, the transition frequency is 0.08MHz.A maximum collector current of 10A volts is possible.

2N3442G Features


the DC current gain for this device is 20 @ 3A 4V
a collector emitter saturation voltage of 5V
the vce saturation(Max) is 5V @ 2A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 10A
a transition frequency of 0.08MHz

2N3442G Applications


There are a lot of ON Semiconductor 2N3442G applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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