2N3773G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N3773G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Surface Mount
NO
Number of Pins
2
Weight
13.607771g
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
140V
Max Power Dissipation
150W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
260
Current Rating
16A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N3773
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
150W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 8A 4V
Current - Collector Cutoff (Max)
10mA
Vce Saturation (Max) @ Ib, Ic
1.4V @ 800mA, 8A
Collector Emitter Breakdown Voltage
140V
Collector Emitter Saturation Voltage
1.4V
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
7V
hFE Min
15
Height
8.51mm
Length
39.37mm
Width
26.67mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.73000
$6.73
10
$6.08300
$60.83
100
$5.03580
$503.58
500
$4.38514
$2192.57
2N3773G Product Details
2N3773G Overview
DC current gain in this device equals 15 @ 8A 4V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 1.4V, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.This device has a current rating of 16A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Maximum collector currents can be below 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V a collector emitter saturation voltage of 1.4V the vce saturation(Max) is 1.4V @ 800mA, 8A the emitter base voltage is kept at 7V the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor 2N3773G applications of single BJT transistors.