MJE15035G Overview

In this device, the DC current gain is 10 @ 2A 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 30MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

MJE15035G Features

the DC current gain for this device is 10 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 30MHz

MJE15035G Applications

There are a lot of ON Semiconductor MJE15035G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter