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FJE3303H1TU

FJE3303H1TU

FJE3303H1TU

ON Semiconductor

FJE3303H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJE3303H1TU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 20W
Current Rating 1.5A
Frequency 4MHz
Base Part Number FJE3303
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 1.5A
Continuous Drain Current (ID) 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 500mA 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 4MHz
Drain to Source Breakdown Voltage 700V
Collector Emitter Saturation Voltage 3V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
Height 11mm
Length 8mm
Width 3.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.088160 $0.08816
500 $0.064824 $32.412
1000 $0.054020 $54.02
2000 $0.049559 $99.118
5000 $0.046317 $231.585
10000 $0.043086 $430.86
15000 $0.041669 $625.035
50000 $0.040972 $2048.6
FJE3303H1TU Product Details

FJE3303H1TU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 500mA 2V.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 500mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.In the part, the transition frequency is 4MHz.In extreme cases, the collector current can be as low as 1.5A volts.

FJE3303H1TU Features


the DC current gain for this device is 8 @ 500mA 2V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz

FJE3303H1TU Applications


There are a lot of ON Semiconductor FJE3303H1TU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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