FJE3303H1TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJE3303H1TU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
20W
Current Rating
1.5A
Frequency
4MHz
Base Part Number
FJE3303
Number of Elements
1
Element Configuration
Single
Power Dissipation
20W
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
1.5A
Continuous Drain Current (ID)
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 500mA 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 500mA, 1.5A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
4MHz
Drain to Source Breakdown Voltage
700V
Collector Emitter Saturation Voltage
3V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
8
Height
11mm
Length
8mm
Width
3.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.088160
$0.08816
500
$0.064824
$32.412
1000
$0.054020
$54.02
2000
$0.049559
$99.118
5000
$0.046317
$231.585
10000
$0.043086
$430.86
15000
$0.041669
$625.035
50000
$0.040972
$2048.6
FJE3303H1TU Product Details
FJE3303H1TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 500mA 2V.As it features a collector emitter saturation voltage of 3V, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 500mA, 1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.In the part, the transition frequency is 4MHz.In extreme cases, the collector current can be as low as 1.5A volts.
FJE3303H1TU Features
the DC current gain for this device is 8 @ 500mA 2V a collector emitter saturation voltage of 3V the vce saturation(Max) is 3V @ 500mA, 1.5A the emitter base voltage is kept at 9V the current rating of this device is 1.5A a transition frequency of 4MHz
FJE3303H1TU Applications
There are a lot of ON Semiconductor FJE3303H1TU applications of single BJT transistors.