2N3904NLBU Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).When collector current reaches its maximum, it can reach 200mA volts.
2N3904NLBU Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
2N3904NLBU Applications
There are a lot of ON Semiconductor 2N3904NLBU applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
