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BSP52

BSP52

BSP52

ON Semiconductor

BSP52 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BSP52 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 188mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 10V
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1A
Base Part Number BSP52
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 1.3V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 2000
Height 1.6mm
Length 6.5mm
Width 3.56mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
BSP52 Product Details

BSP52 Overview


This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1.3V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.3V @ 500μA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 800mA volts can be achieved.

BSP52 Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz

BSP52 Applications


There are a lot of ON Semiconductor BSP52 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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