BSP52 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BSP52 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
10V
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1A
Base Part Number
BSP52
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
1.3V
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
hFE Min
2000
Height
1.6mm
Length
6.5mm
Width
3.56mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
BSP52 Product Details
BSP52 Overview
This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1.3V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.3V @ 500μA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 800mA volts can be achieved.
BSP52 Features
the DC current gain for this device is 2000 @ 500mA 10V a collector emitter saturation voltage of 1.3V the vce saturation(Max) is 1.3V @ 500μA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 200MHz
BSP52 Applications
There are a lot of ON Semiconductor BSP52 applications of single BJT transistors.