2N3904RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 300MHz.Input voltage breakdown is available at 40V volts.In extreme cases, the collector current can be as low as 200mA volts.
2N3904RLRAG Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RLRAG Applications
There are a lot of ON Semiconductor 2N3904RLRAG applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
