2N3906RL1G Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.The part has a transition frequency of 250MHz.This device can take an input voltage of 40V volts before it breaks down.Maximum collector currents can be below 200mA volts.
2N3906RL1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 250MHz
2N3906RL1G Applications
There are a lot of ON Semiconductor 2N3906RL1G applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
