MJE15028 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE15028 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2010
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
120V
Max Power Dissipation
50W
Current Rating
8A
Polarity
NPN
Element Configuration
Single
Power - Max
50W
Gain Bandwidth Product
30MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
120V
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
8A
Collector Emitter Saturation Voltage
500mV
Frequency - Transition
30MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MJE15028 Product Details
MJE15028 Overview
In this device, the DC current gain is 20 @ 4A 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.There is no device package available from the supplier for this product.There is a 120V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJE15028 Features
the DC current gain for this device is 20 @ 4A 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 8A the supplier device package of TO-220AB
MJE15028 Applications
There are a lot of ON Semiconductor MJE15028 applications of single BJT transistors.