MJE344G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.When VCE saturation is 1V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 15MHz.Collector current can be as low as 500mA volts at its maximum.

MJE344G Features

the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 15MHz

MJE344G Applications

There are a lot of ON Semiconductor MJE344G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting